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savantic semiconductor product specification silicon pnp power transistors 2SB856 description with to-220c package low collector saturation voltage applications low frequency power amplifier pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -50 v v ceo collector-emitter voltage open base -50 v v ebo emitter-base voltage open collector -4 v i c collector current -3 a p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -45~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB856 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; r be = 6 -50 v v (br)cbo collector-base breakdown voltage i c =-5ma; i e =0 -50 v v (br)ebo emitter-base breakdown votage i e =-5ma; i c =0 -4 v v cesat collector-emitter saturation voltage i c =-2 a;i b =-0.2 a -1.2 v v be base-emitter voltage i c =-1a ; v ce =-4v -1.5 v i cbo collector cut-off current v cb =-20v; i e =0 -100 a h fe-1 dc current gain i c =-1a ; v ce =-4v 35 200 h fe-2 dc current gain i c =-0.1a ; v ce =-4v 35 f t transition frequency i c =-0.5a ; v ce =-4v 35 mhz h fe-1 classifications a b c 35-70 60-120 100-200 downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SB856 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm) downloaded from: http:///

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